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  high voltage transistors pnp silicon maximum ratings rating symbol bf421 bf423 unit collectoremitter voltage v ceo 300 250 vdc collectorbase voltage v cbo 300 250 vdc emitterbase voltage v ebo 5.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r  ja 200 c/w thermal resistance, junction to case r  jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) bf421 bf423 v (br)ceo 300 250 e e vdc collectorbase breakdown voltage (i c = 100  adc, i e = 0) bf421 bf423 v (br)cbo 300 250 e e vdc emitterbase breakdown voltage (i e = 100  adc, i c = 0) bf421 bf423 v (br)ebo 5.0 5.0 e e vdc collector cutoff current (v cb = 200 vdc, i e = 0) bf421 bf423 i cbo e e 0.01 e  adc emitter cutoff current (v eb = 5.0 vdc, i c = 0) bf421 bf423 i ebo e e 100 e nadc 1. pulse test: pulse width  300  s; duty cycle  2.0%. on semiconductor  ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: bf421/d bf421 bf423 case 2911, style 14 to92 (to226aa) 1 2 3 collector 2 3 base 1 emitter
bf421 bf423 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 25 ma, v ce = 20 vdc) bf421 bf423 h fe 50 50 e e e collectoremitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) e 0.5 vdc baseemitter saturation voltage (i c = 20 ma, i b = 2.0 ma) v be(sat) e 2.0 vdc smallsignal characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 10 vdc, f = 20 mhz) f t 60 e mhz common emitter feedback capacitance (v cb = 30 vdc, i e = 0, f = 1.0 mhz) c re e 2.8 pf
bf421 bf423 http://onsemi.com 3 figure 1. dc current gain figure 2. capacitance i c , collector current (ma) 150 90 70 50 30 10 t j = 25 c v ce = 20 vdc f = 20 mhz f, current-gain bandwidth (mhz) t 1 figure 3. currentgain e bandwidth 130 21 c, capacitance (pf) v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c ib @ 1mhz 100 1.0 c cb @ 1mhz i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 110 3579 19 17 15 13 11 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 4. oono voltages i c , collector current (ma) 300 0.1 1.0 10 250 200 150 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 50 100
bf421 bf423 http://onsemi.com 4 package dimensions case 02911 (to226aa) issue aj notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 14: pin 1. emitter 2. collector 3. base on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bf421/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland


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